Significant publications

Z. Wang, Y. Gao, A. S. Kashi, J. C. Cartledge, and A. P. Knights, “Silicon Microring Modulator for Dispersion Uncompensated Transmission Applications,” J. Light. Technol., vol. 34, no. 16, pp. 3675–3681, Aug. 2016.

J. J. Ackert et al., “High-speed detection at two micrometres with monolithic silicon photodiodes,” Nat. Photonics, vol. 9, no. 6, pp. 393–396, May 2015.

K. Padmaraju, D. F. Logan, X. Zhu, J. J. Ackert, A. P. Knights, and K. Bergman, “Integrated thermal stabilization of a microring modulator,” Opt. Express, vol. 21, no. 12, p. 14342, Jun. 2013.

K. J. Dudeck, L. A. Marqués, A. P. Knights, R. M. Gwilliam, and G. A. Botton, “Sub-ångstrom Experimental Validation of Molecular Dynamics for Predictive Modeling of Extended Defect Structures in Si,” Phys. Rev. Lett., vol. 110, no. 16, p. 166102, Apr. 2013.

C. J. Edwardson, P. G. Coleman, D. J. Paez, J. K. Doylend, and A. P. Knights, “Direct Observation of Electron Capture and Reemission by the Divacancy via Charge Transient Positron Spectroscopy,” Phys. Rev. Lett., vol. 110, no. 13, p. 136401, Mar. 2013.

J. D. B. Bradley, P. E. Jessop, and A. P. Knights, “Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550 nm,” Appl. Phys. Lett., vol. 86, no. 24, p. 241103, 2005.

Peer-Reviewed Publications

1. Z. Wang, Y. Gao, A. S. Kashi, J. C. Cartledge, and A. P. Knights, “Silicon Microring Modulator for Dispersion Uncompensated Transmission Applications,” J. Light. Technol., vol. 34, no. 16, pp. 3675–3681, Aug. 2016.
2. D. J. Paez, E. Huante-Ceron, and A. P. Knights, “Indium as a p-type dopant of thin film silicon solar cells,” Thin Solid Films, vol. 615, pp. 358–365, Sep. 2016.
3. J. M. Rothenberg et al., “Experimental demonstration of coherent perfect absorption in a silicon photonic racetrack resonator,” Opt. Lett., vol. 41, no. 11, p. 2537, Jun. 2016.
4. Hagan D. E.; Knights A. P., “Mechanisms for Optical Loss in SOI Waveguides for Mid-Infrared Wavelengths around 2 Microns,” J. Opt., vol. accepted for publication, 2016.
5. M. Hasanuzzaman, Y. M. Haddara, and A. P. Knights, “Role of a Si0.95Ge0.05 epilayer cap on boron diffusion in silicon under inert and dry oxidizing ambient annealing,” Mater. Sci. Semicond. Process., vol. 48, pp. 60–64, Jun. 2016.
6. R. Anthony and A. P. Knights, “Thin film germanium on silicon created via ion implantation and oxide trapping,” J. Phys. Conf. Ser., vol. 619, p. 12001, Jun. 2015.
7. S. K. Purdy, A. P. Knights, M. P. Bradley, and G. S. Chang, “Light-Emitting Diodes Fabricated From Carbon Ions Implanted Into p-Type Silicon,” IEEE Trans. Electron Devices, vol. 62, no. 3, pp. 914–918, Mar. 2015.
8. J. J. Ackert et al., “High-speed detection at two micrometres with monolithic silicon photodiodes,” Nat. Photonics, vol. 9, no. 6, pp. 393–396, May 2015.
9. M. Ishii, I. F. Crowe, M. P. Halsall, A. P. Knights, R. M. Gwilliam, and B. Hamilton, “Electrical observation of non-radiative recombination in Er doped Si nano-crystals during thermal quenching of intra-4f luminescence,” Jpn. J. Appl. Phys., vol. 53, no. 3, p. 31302, Mar. 2014.
10. D. J. Thomson et al., “Optical detection and modulation at 2µm-25µm in silicon,” Opt. Express, vol. 22, no. 9, p. 10825, May 2014.
11. M. Ishii, I. F. Crowe, M. P. Halsall, A. P. Knights, R. M. Gwilliam, and B. Hamilton, “Luminescence quenching of conductive Si nanocrystals via ‘Linkage emission’: Hopping-like propagation of infrared-excited Auger electrons,” J. Appl. Phys., vol. 116, no. 6, p. 63513, Aug. 2014.
12. L. A. Marqués, M. Aboy, K. J. Dudeck, G. A. Botton, A. P. Knights, and R. M. Gwilliam, “Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon,” J. Appl. Phys., vol. 115, no. 14, p. 143514, Apr. 2014.
13. K. Padmaraju, D. F. Logan, T. Shiraishi, J. J. Ackert, A. P. Knights, and K. Bergman, “Wavelength Locking and Thermally Stabilizing Microring Resonators Using Dithering Signals,” J. Light. Technol., vol. 32, no. 3, pp. 505–512, Feb. 2014.
14. S. T. Fard et al., “Silicon-on-insulator sensors using integrated resonance-enhanced defect-mediated photodetectors,” Opt. Express, vol. 22, no. 23, p. 28517, Nov. 2014.
15. Q. Li et al., “A 10-Gb/s Silicon Microring Resonator-Based BPSK Link,” IEEE Photonics Technol. Lett., vol. 26, no. 18, pp. 1805–1808, Sep. 2014.
16. J. J. Ackert, A. S. Karar, J. C. Cartledge, P. E. Jessop, and A. P. Knights, “Monolithic silicon waveguide photodiode utilizing surface-state absorption and operating at 10 Gb/s,” Opt. Express, vol. 22, no. 9, p. 10710, May 2014.
17. Ackert, JJ,Karar, AS,Cartledge, JC, Jessop, PE,Knights AP, “10 Gb/s bit error free performance of a monolithic silicon avalanche waveguide-integrated photodetector,” in Proc. of OFC, 2014.
18. P. Yang et al., “Size limit on the phosphorous doped silicon nanocrystals for dopant activation,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol. 307, pp. 456–458, Jul. 2013.
19. G. Zhu, S. Lazar, A. P. Knights, and G. A. Botton, “Atomic-level 2-dimensional chemical mapping and imaging of individual dopants in a phosphor crystal,” Phys. Chem. Chem. Phys., vol. 15, no. 27, p. 11420, 2013.
20. K. J. Dudeck, L. A. Marqués, A. P. Knights, R. M. Gwilliam, and G. A. Botton, “Sub-ångstrom Experimental Validation of Molecular Dynamics for Predictive Modeling of Extended Defect Structures in Si,” Phys. Rev. Lett., vol. 110, no. 16, p. 166102, Apr. 2013.
21. K. Debnath, F. Y. Gardes, A. P. Knights, G. T. Reed, T. F. Krauss, and L. O’Faolain, “Dielectric waveguide vertically coupled to all-silicon photodiodes operating at telecommunication wavelengths,” Appl. Phys. Lett., vol. 102, no. 17, p. 171106, 2013.
22. C. J. Edwardson, P. G. Coleman, D. J. Paez, J. K. Doylend, and A. P. Knights, “Direct Observation of Electron Capture and Reemission by the Divacancy via Charge Transient Positron Spectroscopy,” Phys. Rev. Lett., vol. 110, no. 13, p. 136401, Mar. 2013.
23. I. F. Crowe et al., “Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation,” J. Appl. Phys., vol. 113, no. 2, p. 24304, 2013.
24. J. J. Ackert, A. S. Karar, D. J. Paez, P. E. Jessop, J. C. Cartledge, and A. P. Knights, “10 Gbps silicon waveguide-integrated infrared avalanche photodiode,” Opt. Express, vol. 21, no. 17, p. 19530, Aug. 2013.
25. K. Padmaraju, D. F. Logan, X. Zhu, J. J. Ackert, A. P. Knights, and K. Bergman, “Integrated thermal stabilization of a microring modulator,” Opt. Express, vol. 21, no. 12, p. 14342, Jun. 2013.
26. R. E. Warburton et al., “Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm,” IEEE Trans. Electron Devices, vol. 60, no. 11, pp. 3807–3813, Nov. 2013.
27. K. J. Dudeck, E. Huante-Ceron, A. P. Knights, R. M. Gwilliam, and G. A. Botton, “Direct observation of indium precipitates in silicon following high dose ion implantation,” Semicond. Sci. Technol., vol. 28, no. 12, p. 125012, Dec. 2013.
28. K. J. Dudeck, L. A. Marqués, A. P. Knights, R. M. Gwilliam, and G. A. Botton, “Sub-ångstrom Experimental Validation of Molecular Dynamics for Predictive Modeling of Extended Defect Structures in Si,” Phys. Rev. Lett., vol. 110, no. 16, p. 166102, Apr. 2013.
29. K. Padmaraju, D. F. Logan, X. Zhu, J. J. Ackert, A. P. Knights, and K. Bergman, “Integrated thermal stabilization of a microring modulator,” Opt. Express, vol. 21, no. 12, p. 14342, Jun. 2013.
30. D. F. Logan, P. Velha, M. Sorel, R. M. De La Rue, P. E. Jessop, and A. P. Knights, “Monitoring and Tuning Micro-Ring Properties Using Defect-Enhanced Silicon Photodiodes at 1550 nm,” IEEE Photonics Technol. Lett., vol. 24, no. 4, pp. 261–263, Feb. 2012.
31. J. J. Ackert, A. P. Knights, P. E. Jessop, and K. J. Murray, “Photodetector for 1550 nm formed in silicon-on-insulator slab waveguide,” Electron. Lett., vol. 48, no. 18, pp. 1148–1150, Aug. 2012.
32. J. K. Doylend and A. P. Knights, “The evolution of silicon photonics as an enabling technology for optical interconnection,” Laser Photon. Rev., vol. 6, no. 4, pp. 504–525, Jul. 2012.
33. M. Hasanuzzaman, Y. M. Haddara, and A. P. Knights, “A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process,” J. Appl. Phys., vol. 112, no. 6, p. 64302, 2012.
34. A. P. Knights, J. J. Ackert, D. F. Logan, E. Huante-Ceron, and P. E. Jessop, “Deep-levels in silicon waveguides: a route to high yield fabrication,” Opt. Quantum Electron., vol. 44, no. 12–13, pp. 575–580, Oct. 2012.
35. M. Ishii, I. F. Crowe, M. P. Halsall, A. P. Knights, R. M. Gwilliam, and B. Hamilton, “Investigation of the thermal charge ‘trapping-detrapping’ in silicon nanocrystals: Correlation of the optical properties with complex impedance spectra,” Appl. Phys. Lett., vol. 101, no. 24, p. 242108, 2012.
36. P. G. Coleman, C. J. Edwardson, A. P. Knights, and R. M. Gwilliam, “Vacancy-type defects created by single-shot and chain ion implantation of silicon,” New J. Phys., vol. 14, no. 2, p. 25007, Feb. 2012.
37. M. Hasanuzzaman, Y. M. Haddara, and A. P. Knights, “Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap,” J. Appl. Phys., vol. 112, no. 5, p. 54909, 2012.
38. P. J. Simpson, C. R. Mokry, and A. P. Knights, “Formation of light-emitting silicon nanoclusters in SiO 2,” J. Phys. Conf. Ser., vol. 265, p. 12022, Jan. 2011.
39. J. J. Ackert et al., “Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth,” J. Nanophotonics, vol. 5, no. 1, p. 59507, Jan. 2011.
40. J. K. Doylend, P. E. Jessop, and A. P. Knights, “Optical attenuation in ion-implanted silicon waveguide racetrack resonators,” Opt. Express, vol. 19, no. 16, p. 14913, Aug. 2011.
41. I. F. Crowe et al., “Probing the phonon confinement in ultrasmall silicon nanocrystals reveals a size-dependent surface energy,” J. Appl. Phys., vol. 109, no. 8, p. 83534, 2011.
42. J. J. Ackert et al., “Defect-mediated resonance shift of silicon-on-insulator racetrack resonators,” Opt. Express, vol. 19, no. 13, p. 11969, Jun. 2011.
43. P. G. Coleman, D. Nash, C. J. Edwardson, A. P. Knights, and R. M. Gwilliam, “The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy,” J. Appl. Phys., vol. 110, no. 1, p. 16104, 2011.
44. C. J. Brooks, A. P. Knights, and P. E. Jessop, “Vertically-integrated multimode interferometer coupler for 3D photonic circuits in SOI,” Opt. Express, vol. 19, no. 4, p. 2916, Feb. 2011.
45. H. Jayatilleka et al., “Probing energy transfer in an ensemble of silicon nanocrystals,” J. Appl. Phys., vol. 110, no. 3, p. 33522, 2011.
46. S. Ruffell, A. P. Knights, J. E. Bradby, and J. S. Williams, “Impurity-free seeded crystallization of amorphous silicon by nanoindentation,” J. Appl. Phys., vol. 110, no. 8, p. 83707, 2011.
47. D. F. Logan et al., “Analysis of resonance enhancement in defect-mediated silicon micro-ring photodiodes operating at 1550 nm,” J. Opt., vol. 13, no. 12, p. 125503, Jan. 2011.
48. D. F. Logan, A. P. Knights, P. E. Jessop, and N. G. Tarr, “Defect-enhanced photo-detection at 1550 nm in a silicon waveguide formed via LOCOS,” Semicond. Sci. Technol., vol. 26, no. 4, p. 45009, Apr. 2011.
49. A. P. Knights et al., “Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy,” J. Phys. Conf. Ser., vol. 262, p. 12031, Jan. 2011.
50. I. F. Crowe et al., “Probing the phonon confinement in ultrasmall silicon nanocrystals reveals a size-dependent surface energy,” J. Appl. Phys., vol. 109, no. 8, p. 83534, 2011.
51. S. Ruffell, K. Sears, A. P. Knights, J. E. Bradby, and J. S. Williams, “Experimental evidence for semiconducting behavior of Si-XII,” Phys. Rev. B, vol. 83, no. 7, p. 75316, Feb. 2011.
52. M. Couillard, G. Radtke, A. P. Knights, and G. A. Botton, “Three-Dimensional Atomic Structure of Metastable Nanoclusters in Doped Semiconductors,” Phys. Rev. Lett., vol. 107, no. 18, p. 186104, Oct. 2011.
53. D. J. Thomson et al., “Total Internal Reflection Optical Switch in SOI With Defect Engineered Barrier Region,” J. Light. Technol., vol. 28, no. 17, pp. 2483–2491, Sep. 2010.
54. F. E. Rougieux et al., “Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon,” J. Appl. Phys., vol. 108, no. 1, p. 13706, 2010.
55. M. P. Halsall et al., “(Invited) Novel Processing for Si-Nanocrystal Based Photonic Materials,” 2010, pp. 3–13.
56. J. K. Doylend, P. E. Jessop, and A. P. Knights, “Silicon photonic dynamic optical channel leveler with external feedback loop,” Opt. Express, vol. 18, no. 13, p. 13805, Jun. 2010.
57. I. F. Crowe et al., “Spatially correlated erbium and Si nanocrystals in coimplanted SiO[sub 2] after a single high temperature anneal,” J. Appl. Phys., vol. 107, no. 4, p. 44316, 2010.
58. J. K. Doylend, A. P. Knights, B. J. Luff, R. Shafiiha, M. Asghari, and R. M. Gwilliam, “Modifying functionality of variable optical attenuator to signal monitoring through defect engineering,” Electron. Lett., vol. 46, no. 3, p. 234, 2010.
59. N. P. Hylton, I. F. Crowe, A. P. Knights, M. P. Halsall, S. Ruffell, and R. M. Gwilliam, “Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion implantation into SiO 2,” 2010, p. 760604.
60. J. K. Doylend, P. E. Jessop, and A. P. Knights, “Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection,” Opt. Express, vol. 18, no. 14, p. 14671, Jul. 2010.
61. D. F. Logan, P. Velha, M. Sorel, R. M. De La Rue, A. P. Knights, and P. E. Jessop, “Defect-Enhanced Silicon-on-Insulator Waveguide Resonant Photodetector With High Sensitivity at 1.55  $\mu$m,” IEEE Photonics Technol. Lett., vol. 22, no. 20, pp. 1530–1532, Oct. 2010.
62. A. P. Knights et al., “Observation of non-radiative de-excitation processes in silicon nanocrystals,” Phys. status solidi, vol. 206, no. 5, pp. 969–972, May 2009.
63. D. E. Blakie et al., “Photoluminescence and positron annihilation spectroscopy of MeV Si[sup +] ion-irradiated Si[sub y]O[sub 1−y]:Er (y≈1/3) thin films,” J. Appl. Phys., vol. 105, no. 5, p. 53517, 2009.
64. D. F. Logan, P. E. Jessop, A. P. Knights, G. Wojcik, and A. Goebel, “Optical modulation in silicon waveguides via charge state control of deep levels,” Opt. Express, vol. 17, no. 21, p. 18571, Oct. 2009.
65. P. E. Jessop, L. K. Rowe, S. M. McFaul, A. P. Knights, N. G. Tarr, and A. Tam, “Study of the monolithic integration of sub-bandgap detection, signal amplification and optical attenuation on a silicon photonic chip,” J. Mater. Sci. Mater. Electron., vol. 20, no. S1, pp. 456–459, Jan. 2009.
66. D. F. Logan, P. E. Jessop, and A. P. Knights, “Modeling Defect Enhanced Detection at 1550 nm in Integrated Silicon Waveguide Photodetectors,” J. Light. Technol., vol. 27, no. 7, pp. 930–937, Apr. 2009.
67. M. Hasanuzzaman, Y. M. Haddara, and A. P. Knights, “Modeling germanium diffusion in Si[sub 1−x]Ge[sub x]/Si superlattice structures,” J. Appl. Phys., vol. 105, no. 4, p. 43504, 2009.
68. C. R. Mokry, P. J. Simpson, and A. P. Knights, “Role of vacancy-type defects in the formation of silicon nanocrystals,” J. Appl. Phys., vol. 105, no. 11, p. 114301, 2009.
69. S. Homampour, M. P. Bulk, P. E. Jessop, and A. P. Knights, “Thermal tuning of planar Bragg gratings in silicon-on-insulator rib waveguides,” Phys. status solidi, vol. 6, no. S1, pp. S240–S243, May 2009.
70. A. J. Smith et al., “Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates,” J. Appl. Phys., vol. 106, no. 10, p. 103514, 2009.
71. W. D. Walters and A. P. Knights, “Application of defect engineering to silicon Raman lasers and amplifiers,” J. Mater. Sci. Mater. Electron., vol. 20, no. S1, pp. 48–53, Jan. 2009.
72. D. Thomson, F. Y. Gardes, G. Z. Mashanovich, A. P. Knights, and G. T. Reed, “Using Carrier Confinement in Total Internal Reflection Optical Switches to Restrict Carrier Diffusion in the Guiding Layer,” J. Light. Technol., vol. 26, no. 10, pp. 1288–1294, May 2008.
73. P. J. Simpson et al., “Thermal evolution of defects produced by implantation of H, D and He in Silicon,” Appl. Surf. Sci., vol. 255, no. 1, pp. 63–67, Oct. 2008.
74. K. J. Dudeck, W. D. Walters, A. P. Knights, and P. G. Coleman, “Observation of vacancy defects at silicon grain boundaries formed via suppressed solid phase epitaxy,” J. Phys. D. Appl. Phys., vol. 41, no. 5, p. 55102, Mar. 2008.
75. A. P. Knights, K. J. Dudeck, W. D. Walters, and P. G. Coleman, “Modification of silicon waveguide structures using ion implantation induced defects,” Appl. Surf. Sci., vol. 255, no. 1, pp. 75–77, Oct. 2008.
76. D. Logan, A. P. Knights, P. E. Jessop, and N. G. Tarr, “Design of integrated LOCOS waveguide photodetector on SOI,” 2008, p. 68981J.
77. N. M. Wright et al., “Free carrier lifetime modification for silicon waveguide based devices,” Opt. Express, vol. 16, no. 24, p. 19779, Nov. 2008.
78. F. Y. Gardes, G. T. Reed, A. P. Knights, and G. Mashanovich, “Evolution of optical modulation using majority carrier plasma dispersion effect in SOI,” 2008, p. 68980C.
79. L. K. Rowe, M. Elsey, N. G. Tarr, A. P. Knights, and E. Post, “CMOS-compatible optical rib waveguides defined by local oxidation of silicon,” Electron. Lett., vol. 43, no. 7, p. 392, 2007.
80. D. A. Abdulmalik, P. G. Coleman, H. Z. Su, Y. M. Haddara, and A. P. Knights, “The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient,” J. Mater. Sci. Mater. Electron., vol. 18, no. 7, pp. 753–757, May 2007.
81. P. J. Foster, P. Mascher, A. P. Knights, and P. G. Coleman, “Implantation profile of [sup 22]Na continuous energy spectrum positrons in silicon,” J. Appl. Phys., vol. 101, no. 4, p. 43702, 2007.
82. S. Ruffell, P. J. Simpson, and A. P. Knights, “The effect of the annealing ramp rate on the formation of voids in silicon,” J. Phys. Condens. Matter, vol. 19, no. 46, p. 466202, Nov. 2007.
83. L. K. Rowe, M. Elsey, E. Post, N. G. Tarr, and A. P. Knights, “A CMOS-compatible rib waveguide with local oxidation of silicon isolation,” 2007, p. 64770L.
84. J. N. Milgram, A. P. Knights, K. P. Homewood, and R. M. Gwilliam, “Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures,” Semicond. Sci. Technol., vol. 22, no. 10, pp. 1104–1110, Oct. 2007.
85. J. N. Milgram, J. Wojcik, P. Mascher, and A. P. Knights, “Optically pumped Si nanocrystal emitter integrated with low loss silicon nitride waveguides,” Opt. Express, vol. 15, no. 22, p. 14679, 2007.
86. X. D. Pi et al., “Light emission from Si nanoclusters formed at low temperatures,” Appl. Phys. Lett., vol. 88, no. 10, p. 103111, 2006.
87. A. P. Knights, J. D. B. Bradley, S. H. Gou, and P. E. Jessop, “Silicon-on-insulator waveguide photodetector with self-ion-implantation-engineered-enhanced infrared response,” J. Vac. Sci. Technol. A Vacuum, Surfaces, Film., vol. 24, no. 3, p. 783, 2006.
88. X. D. Pi, O. H. Y. Zalloum, A. P. Knights, P. Mascher, and P. J. Simpson, “Electrical conduction of silicon oxide containing silicon quantum dots,” J. Phys. Condens. Matter, vol. 18, no. 43, pp. 9943–9950, Nov. 2006.
89. J. K. Doylend and A. P. Knights, “Design and Simulation of an Integrated Fiber-to-Chip Coupler for Silicon-on-Insulator Waveguides,” IEEE J. Sel. Top. Quantum Electron., vol. 12, no. 6, pp. 1363–1370, Nov. 2006.
90. X. D. Pi et al., “Formation and oxidation of Si nanoclusters in Er-doped Si-rich SiO[sub x],” J. Appl. Phys., vol. 97, no. 9, p. 96108, 2005.
91. P. G. Coleman, R. E. Mason, M. Van Dyken, and A. P. Knights, “Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon,” J. Phys. Condens. Matter, vol. 17, no. 22, pp. S2323–S2330, Jun. 2005.
92. J. D. B. Bradley, P. E. Jessop, and A. P. Knights, “Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550 nm,” Appl. Phys. Lett., vol. 86, no. 24, p. 241103, 2005.
93. P. G. Coleman, A. P. Knights, and M. J. Anc, “Positron annihilation spectroscopy as a diagnostic tool for process monitoring of buried oxide layer formation in Si,” J. Appl. Phys., vol. 93, no. 1, p. 698, 2003.
94. A. P. Knights and G. F. Hopper, “Effect of ion implantation induced defects on optical attenuation in silicon waveguides,” Electron. Lett., vol. 39, no. 23, p. 1648, 2003.
95. P. G. Coleman, C. P. Burrows, and A. P. Knights, “Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon,” Appl. Phys. Lett., vol. 80, no. 6, p. 947, 2002.
96. R. M. Gwilliam, A. P. Knights, C. P. Burrows, and P. G. Coleman, “Room-temperature evolution of vacancy-type damage created by 2 keV B[sup +] implantation of Si,” J. Vac. Sci. Technol. B Microelectron. Nanom. Struct., vol. 20, no. 1, p. 427, 2002.
97. T. K. Liang, H. K. Tsang, I. E. Day, J. Drake, A. P. Knights, and M. Asghari, “Silicon waveguide two-photon absorption detector at 1.5 μm wavelength for autocorrelation measurements,” Appl. Phys. Lett., vol. 81, no. 7, p. 1323, 2002.
98. P. G. Coleman, F. Malik, and A. P. Knights, “At-temperature annealing of near-surface vacancy-type defects observed by positronium formation spectroscopy,” J. Phys. Condens. Matter, vol. 14, no. 4, pp. 681–688, Feb. 2002.
99. T. Surkova et al., “Indium interdiffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots,” J. Appl. Phys., vol. 89, no. 11, p. 6044, 2001.
100. A. P. Knights et al., “Growth temperature dependence for the formation of vacancy clusters in Si/Si[sub 0.64]Ge[sub 0.36]/Si structures,” J. Appl. Phys., vol. 89, no. 1, p. 76, 2001.
101. S. Ahmed, A. P. Knights, R. Gwilliam, and B. J. Sealy, “The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantation,” Semicond. Sci. Technol., vol. 16, no. 3, pp. L17–L19, Mar. 2001.
102. R. . Gwilliam et al., “The study of lattice damage using slow positrons following low energy B+ implantation of silicon,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol. 175–177, pp. 62–67, Apr. 2001.
103. A. Galbiati, M. B. H. Breese, A. P. Knights, B. Sealy, and P. J. Sellin, “Characterisation of a coplanar CVD diamond radiation detector,” Nucl. Instruments Methods Phys. Res. Sect. A Accel. Spectrometers, Detect. Assoc. Equip., vol. 466, no. 1, pp. 52–57, Jun. 2001.
104. P. J. Sellin et al., “Performance of semi-insulating gallium arsenide X-ray pixel detectors with current-integrating readout,” Nucl. Instruments Methods Phys. Res. Sect. A Accel. Spectrometers, Detect. Assoc. Equip., vol. 460, no. 1, pp. 207–212, Mar. 2001.
105. R. J. Curry, W. P. Gillin, A. P. Knights, and R. Gwilliam, “1.5 μm electroluminescence from organic light emitting diodes integrated on silicon substrates,” Opt. Mater. (Amst)., vol. 17, no. 1–2, pp. 161–163, Jun. 2001.
106. M. B. H. Breese, P. J. Sellin, L. C. Alves, A. P. Knights, R. S. Sussmann, and A. J. Whitehead, “Imaging of charge transport properties in polycrystalline CVD diamond using IBIC and IBIL microscopy,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol. 181, no. 1–4, pp. 219–224, Jul. 2001.
107. M. . Lourenço, A. . Knights, K. . Homewood, R. . Gwilliam, P. . Simpson, and P. Mascher, “A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol. 175–177, pp. 300–304, Apr. 2001.
108. R. M. Gwilliam, A. P. Knights, E. Wendler, B. J. Sealy, C. P. Burrows, and P. G. Coleman, “Development of a novel tool for semiconductor process control,” Mater. Sci. Eng. B, vol. 80, no. 1–3, pp. 60–64, Mar. 2001.
109. C. M. Johnson et al., “Recent progress and current issues in SiC semiconductor devices for power applications,” IEE Proc. - Circuits, Devices Syst., vol. 148, no. 2, p. 101, 2001.
110. C. Percival et al., “GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation,” IEEE Trans. Electron Devices, vol. 47, no. 9, pp. 1769–1772, 2000.
111. R. J. Curry, W. P. Gillin, A. P. Knights, and R. Gwilliam, “Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm,” Appl. Phys. Lett., vol. 77, no. 15, p. 2271, 2000.
112. P. J. Hughes, A. P. Knights, B. L. Weiss, and S. Ojha, “Optical characteristics of photosensitive Ge-doped SiO2 planar waveguides implanted with protons at 800°C,” Electron. Lett., vol. 36, no. 5, p. 427, 2000.
113. A. P. Knights et al., “Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar[sup +] implantation,” J. Appl. Phys., vol. 87, no. 8, p. 3973, 2000.
114. D. Morrison et al., “Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation,” Solid. State. Electron., vol. 44, no. 11, pp. 1879–1885, Nov. 2000.
115. A. P. Knights, S. Ruffell, and P. J. Simpson, “Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated n-type GaAs,” J. Appl. Phys., vol. 87, no. 2, p. 663, 2000.
116. P. J. Sellin, M. B. H. Breese, A. P. Knights, L. C. Alves, R. S. Sussmann, and A. J. Whitehead, “Imaging of charge transport in polycrystalline diamond using ion-beam-induced charge microscopy,” Appl. Phys. Lett., vol. 77, no. 6, p. 913, 2000.
117. P. J. Hughes, A. P. Knights, B. L. Weiss, S. Kuna, P. G. Coleman, and S. Ojha, “High temperature proton implantation induced photosensitivity of Ge-doped SiO[sub 2] planar waveguides,” Appl. Phys. Lett., vol. 74, no. 22, p. 3311, 1999.
118. A. P. Knights and M. J. Kelly, “Laterally stacked varactor formed by ion implantation,” Electron. Lett., vol. 35, no. 10, p. 846, 1999.
119. J. W. Taylor, A. S. Saleh, P. C. Rice-Evans, A. P. Knights, and C. Jeynes, “Depth profiling of defects in nitrogen implanted silicon using a slow positron beam,” Appl. Surf. Sci., vol. 149, no. 1–4, pp. 175–180, Aug. 1999.
120. A. P. Knights, F. Malik, and P. G. Coleman, “The equivalence of vacancy-type damage in ion-implanted Si seen by positron annihilation spectroscopy,” Appl. Phys. Lett., vol. 75, no. 4, p. 466, 1999.
121. C. . Burrows, A. . Knights, and P. . Coleman, “Near-surface lateral vacancy migration in O+-implanted SiC studied by positron re-emission microscopy,” Appl. Surf. Sci., vol. 149, no. 1–4, pp. 135–139, Aug. 1999.
122. M. Sotoodeh et al., “Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 46, no. 6, pp. 1081–1086, Jun. 1999.
123. P. G. Coleman, A. P. Knights, and R. M. Gwilliam, “Diagnostic measurement of ion implantation dose and uniformity with a laboratory-based positron probe,” J. Appl. Phys., vol. 86, no. 11, p. 5988, 1999.
124. R. D. Goldberg, A. P. Knights, P. J. Simpson, and P. G. Coleman, “Assessment of the normalization procedure used for interlaboratory comparisons of positron beam measurements,” J. Appl. Phys., vol. 86, no. 1, p. 342, 1999.
125. P. . Coleman and A. . Knights, “Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si,” Appl. Surf. Sci., vol. 149, no. 1–4, pp. 82–86, Aug. 1999.
126. N. . Barradas, S. . Almeida, C. Jeynes, A. . Knights, S. R. . Silva, and B. . Sealy, “RBS and ERDA study of ion beam synthesised amorphous gallium nitride,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol. 148, no. 1–4, pp. 463–467, Jan. 1999.
127. A. Knights, A. Nejim, N. . Barradas, and P. . Coleman, “Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopy,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol. 148, no. 1–4, pp. 340–344, Jan. 1999.
128. P. J. Simpson, M. Spooner, H. Xia, and A. P. Knights, “Enhanced depth resolution in positron analysis of ion irradiated SiO[sub 2] films,” J. Appl. Phys., vol. 85, no. 3, p. 1765, 1999.
129. N. P. Barradas, A. P. Knights, C. Jeynes, O. A. Mironov, T. J. Grasby, and E. H. C. Parker, “High-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms,” Phys. Rev. B, vol. 59, no. 7, pp. 5097–5105, Feb. 1999.
130. A. Nejim, A. P. Knights, C. Jeynes, P. G. Coleman, and C. J. Patel, “Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling,” J. Appl. Phys., vol. 83, no. 7, p. 3565, 1998.
131. R. A. Brown et al., “Impurity gettering to secondary defects created by MeV ion implantation in silicon,” J. Appl. Phys., vol. 84, no. 5, p. 2459, 1998.
132. A. P. Knights, A. Nejim, P. G. Coleman, H. Kheyrandish, and S. Romani, “Open-volume defect tails in Ge-implanted Si probed by slow positrons,” Appl. Phys. Lett., vol. 73, no. 10, p. 1373, 1998.
133. A. P. Knights, R. Apiwatwaja, R. Gwilliam, B. J. Sealy, and P. G. Coleman, “A study of the evolution of carrier and vacancy depth profiles with annealing temperature of Si-implanted GaAs,” Semicond. Sci. Technol., vol. 13, no. 11, pp. 1266–1271, Nov. 1998.
134. F. Malik, P. G. Coleman, A. P. Knights, R. Gwilliam, A. Nejim, and O. Y. Ho, “Positron spectroscopy of vacancy-type defects in Si created by 5 keV implantation,” J. Phys. Condens. Matter, vol. 10, no. 46, pp. 10403–10408, Nov. 1998.
135. X. Huang, A. J. Seeds, J. S. Roberts, and A. P. Knights, “Monolithically integrated quantum-confined stark effect tuned laser with uniform frequency modulation response,” IEEE Photonics Technol. Lett., vol. 10, no. 12, pp. 1697–1699, Dec. 1998.
136. W. Wu, A. R. Hawkins, and J. E. Bowers, “Design of silicon hetero-interface photodetectors,” J. Light. Technol., vol. 15, no. 8, pp. 1608–1615, 1997.
137. A. P. Knights, M. W. G. Ponjée, P. J. Simpson, M. Zinke-Allmang, and G. R. Carlow, “Positron characterization of defects formed during solid phase epitaxy of cobalt silicide,” Semicond. Sci. Technol., vol. 12, no. 2, pp. 173–178, Feb. 1997.
138. A. P. Knights, L. B. Allard, J. L. Brebner, and P. J. Simpson, “Annealing of defects induced by Ge irradiation of silica probed with variable energy positrons,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol. 127–128, pp. 86–89, May 1997.
139. D. P. van der Werf et al., “Positron studies of plasma-treated silicon wafers,” Appl. Surf. Sci., vol. 116, pp. 228–230, May 1997.
140. P. J. Simpson, A. P. Knights, R. D. Goldberg, G. C. Aers, and D. Landheer, “Intrinsic electric fields in silicon,” Appl. Surf. Sci., vol. 116, pp. 211–214, May 1997.
141. A. Goodyear, A. P. Knights, and P. G. Coleman, “Energy spectroscopy of positrons reemitted from Ag(100),” Phys. Lett. A, vol. 212, no. 4, pp. 221–226, Mar. 1996.
142. A. P. Knights et al., “Investigation of magnetron-sputtered titanium nitride films using positron annihilation spectroscopy,” J. Phys. Condens. Matter, vol. 8, no. 14, pp. 2479–2486, Apr. 1996.
143. A. P. Knights, P. J. Simpson, L. B. Allard, J. L. Brebner, and J. Albert, “Si ion implantation-induced damage in fused silica probed by variable-energy positrons,” J. Appl. Phys., vol. 79, no. 12, p. 9022, 1996.
144. G. Brauer et al., “Positron studies of defects in ion-implanted SiC,” Phys. Rev. B, vol. 54, no. 5, pp. 3084–3092, Aug. 1996.
145. A. P. Knights, G. R. Carlow, M. Zinke-Allmang, and P. J. Simpson, “Defect evolution in Co-implanted Si during annealing at 1000 °C studied using variable-energy positrons and Rutherford backscattering,” Phys. Rev. B, vol. 54, no. 19, pp. 13955–13961, Nov. 1996.
146. A. P. Knights and P. G. Coleman, “The effect of thermalisation length and work function on epithermal positron emission from solids,” Surf. Sci., vol. 367, no. 2, pp. 238–244, Nov. 1996.
147. U. Myler, R. D. Goldberg, A. P. Knights, D. W. Lawther, and P. J. Simpson, “Chemical information in positron annihilation spectra,” Appl. Phys. Lett., vol. 69, no. 22, p. 3333, 1996.
148. N. Overton, A. P. Knights, A. Goodyear, and P. G. Coleman, “Work function and epithermal positron emission from copper,” Appl. Surf. Sci., vol. 85, pp. 54–58, Jan. 1995.
149. A. P. Knights and P. G. Coleman, “Secondary electron emission from Ag(100) stimulated by positron and electron impact,” Appl. Surf. Sci., vol. 85, pp. 43–48, Jan. 1995.
150. A. P. Knights and P. G. Coleman, “The observation of structure in the dependence of the 1 keV positron backscattering coefficient on target atomic number,” J. Phys. Condens. Matter, vol. 7, no. 18, pp. 3485–3492, May 1995.
151. A. P. Knights and P. G. Coleman, “Relative probabilities of work-function and epithermal positron re-emission from silver,” J. Phys. Condens. Matter, vol. 7, no. 32, pp. 6477–6482, Aug. 1995.
152. A. P. Knights et al., “Positron annihilation spectroscopy applied to porous silicon films,” J. Appl. Phys., vol. 78, no. 7, p. 4411, 1995.
153. G. Brauer et al., “Positron studies of polycrystalline TiC,” J. Phys. Condens. Matter, vol. 7, no. 47, pp. 9091–9099, Nov. 1995.
154. A. Goodyear, A. P. Knights, and P. G. Coleman, “Energy spectroscopy of positrons re-emitted from polycrystalline tungsten,” J. Phys. Condens. Matter, vol. 6, no. 45, pp. 9601–9611, Nov. 1994.